收藏本站
NTTFS4840N
Power MOSFET
30 V, 26 A, Single N ? Channel, m 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters
? Point of Load
? Power Load Switch
? Notebook Battery Management
? Motor Control
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
24 m W @ 10 V
36 m W @ 4.5 V
N ? Channel MOSFET
D (5 ? 8)
I D MAX
26 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
± 20
V
G (4)
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
7.3
5.3
A
S (1,2,3)
S
D
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA (Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
P D
I D
P D
I D
P D
I D
2.2
10.3
7.5
4.4
4.6
3.3
0.84
26
19
W
A
W
A
W
A
MARKING DIAGRAM
1
1
WDFN8 S 4840 D
( m 8FL) S AYWW G D
CASE 511AB G G D
4840 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation T C = 25 ° C
R q JC (Note 1)
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
P D
I DM
T J ,
T stg
I S
27.8
77
? 55 to
+150
23
W
A
° C
A
ORDERING INFORMATION
Device Package Shipping ?
NTTFS4840NTAG WDFN8 1500/Tape & Reel
(Pb ? Free)
Drain to Source dV/dt
dV/dt
6.0
V/ns
NTTFS4840NTWG
WDFN8
5000/Tape & Reel
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 18.3 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
E AS
T L
16.7
260
mJ
° C
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2011
January, 2011 ? Rev. 1
1
Publication Order Number:
NTTFS4840N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTTFS4928NTAG MOSFET N-CH 30V 7.3A 8WDFN
NTTFS4929NTAG MOSFET N-CH 30V 34A 8WDFN
NTTFS4930NTWG MOSFET N-CH 30V 23A 8WDFN
NTTFS4932NTAG MOSFET N-CH 30V 11A 8WDFN
NTTFS4937NTAG MOSFET N-CH 30V 11A 8WDFN
NTTFS4939NTAG MOSFET N-CH 30V 8.9A 8WDFN
NTTFS4941NTAG MOSFET N-CH 30V 8.3A 8WDFN
NTTFS4985NFTAG MOSFET N-CH 30V 16.3A 8-WDFN
相关代理商/技术参数
NTTFS4840NTWG 功能描述:MOSFET NFET U8FL 30V 26A 24mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS4928N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 37 A, Single N?Channel, 8FL DC?DC Converters
NTTFS4928NTAG 功能描述:MOSFET NFET U8FL 30V 41A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS4928NTWG 功能描述:MOSFET NFET U8FL 30V 41A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS4929N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 34 A, Single Na??Channel, 8FL
NTTFS4929NTAG 功能描述:MOSFET NFET U8FL 30V 34A 11 MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS4929NTWG 功能描述:MOSFET NFET U8FL 30V 34A 11 MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTFS4930N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 23 A, Single N?Channel, 8FL Notebook Battery Management